Author(s)

Xiying Ma, Weixia Gu, Yan Tang

Corresponding Author

Xiying Ma

Abstract

we investigated the contact and the voltage-current characteristics of n-MoS2/p-Si heterojunction based on the ideal p-n junction diffusing model, and analyzed the effects of the doping concentrations of n-MoS2 and p-Si on the band structure and transport properties. The results indicate that the built-in potential and the width of depletion region both depend on the doping concentrations. The built-in potential is positively related to them while the width of depletion region declines sharply with the increase of them. In addition, we found that the current density decreases with the increase of the doping concentration of p-Si, and significantly increase with the increase of the temperature, but not large relation to that of n-MoS2. These results will give meaningful of instructor for fabricating MoS2 optoelectronic devices.

Keywords

Contact characteristics, MoS2/Si heterojunction, doping concentrations