Author(s)

Peng Xiangfei, Yang Rong

Corresponding Author

Peng Xiangfei

Abstract

Nowadays,the Tr-Based Active Electronically Scanned Array ( Aesa) Jammer is Growing Rapidly and Will Dominate the Future Applications of Ew System.the High Power Circuit is the Key Circuit of t/r Modules,Will Influence Development of System. Firstly the Design of High Power Circuit Based Gan Mmic Technology is Presented. Secondly the Technological Development of Heat Radiation Based New Packaging Material and High Performance Emc is Analysed. Finally Design Result Has Been Applied to the New Generation of t/r Product. This Will Promote Rapid Growth of Our country’s Chinese Aesa Jammer.

Keywords

Aesa Jammer; t/r Module; the 3rd Generation Semi-Conductor; Gan Mmic; Diamond-Cu Composite Material