Author(s)

Wenpeng Zhou, Zhanqing Yu, Jiapeng Liu, Rong Zeng, Weijia Yang, Gang Lyu, Chaoqun Xu

Corresponding Author

Wenpeng Zhou

Abstract

in recent years, with the application of power electronic techniques in power system, massive needs for high power devices occurred. Integrated Gate Commutated Thyristor (IGCT) has gained much attention in high power applications with its advantage in high blocking voltage and low conduction loss. Due to the massive quantity of segments in parallel in one single GCT chip, it is of significance to distinguish and remove the weak cells in order to achieve a better whole wafer performance. In this paper, an advanced probe system designed for GCT-like concentric device test is presented. Tested result for 4-inch device is also presented and analyzed.

Keywords

IGCT, probe system, short circuit point inspection, distribution